格子間原子が欠陥の移動を遅くも速くもする仕組み

Mobile interstitial atoms redistribute while defects migrate, complicating prediction of defect kinetics and leading to contradictory reports of acceleration and retardation. We formulate defect activation in a grand-canonical ensemble at fixed interstitial chemical potential and define a pathway free-energy landscape $\Delta G(\Lambda;T,\mu)$ and the corresponding activation free energy $\Delta G^{\ddagger}$. We compute these quantities using both hyperplane-constrained thermodynamic integration via a mean force relation and a two-state chemical-potential integration, denoted TSCPI. The latter requires sampling only the initial and transition states; a single chemical-potential integration then yields $\Delta G^{\ddagger}(T,\mu)$ across a wide $\mu$ range, enabling rapid mapping over temperature and chemical potential. Applied to vacancy diffusion in FCC, BCC, and HCP metals with H (including in plane and cross plane diffusion in Zr) and in BCC W with He, both free energy routes agree with diffusion coefficients from molecular dynamics mean square displacements. The resulting maps reveal regimes of suppression and enhancement, including a crossover from suppression to enhancement with increasing hydrogen concentration. A site occupancy analysis links barrier shifts to state dependent site spectrum changes and transferable interstitial interaction terms.