実験で較正したSi/SiGe量子デバイスの3Dシミュレーション

Silicon-based spin qubits in Si/SiGe heterostructures are a leading platform for scalable quantum computing, yet bridging the gap between theoretical computer-aided design(CAD) models and experimental reality remains a significant challenge. Standard simulations often fail to capture critical physical phenomena, such as interface dipoles, parasitic charge accumulation, and the magnetic hysteresis of on-chip micromagnets. In this work, we present a comprehensive, experimentally calibrated 3D simulation pipeline for a 6-dot Si/SiGe device. We refine the semiconductor band alignment and introduce a semi-empirical classical charge screening model to accurately capture the formation of parasitic wells and their suppression of gate lever-arms. Furthermore, we apply the Jiles-Atherton model to account for the hysteresis and pre-magnetization of integrated cobalt micromagnets, successfully reproducing the experimental resonant frequencies across all six qubits. By coupling these calibrated electrostatic and magnetic profiles into a time-dependent rotating wave approximation (RWA) Hamiltonian, we reproduce experimental observables, including microwave power chevrons. This framework provides a robust foundation for predicting device behavior, evaluating microwave line losses, and optimizing future scalable spin qubit architectures prior to fabrication.