RAlGe結晶の磁性と電気輸送の方向依存性

We grew single crystals of the RAlGe family for R = Y, Gd-Tm, Lu and characterized them with powder X-ray diffraction, temperature dependent specific heat measurements as well as temperature and field dependent resistance and magnetization measurements. These RAlGe materials crystallize in an orthorhombic Cmcm crystal structure in which the R atoms occupy a position with $m$2$m$ point symmetry. We find that when R is a moment bearing rare earth atom, the RAlGe materials order antifferomagnetically at $T_{\text{N}}$ ranging from 5 K (TmAlGe) to 39 K (TbAlGe). A second, lower temperature antiferromagnetic transition is also detected in the range 6-8 K for R = Tb-Ho, but no lower transition is observed (for T above 1.8 K) for R = Er, Tm. The R = Tb-Tm members show evidence for strong crystal field effects influencing the physical properties, where the crystal field favors an easy $a$-axis for R = Tb-Ho and an easy $b$-axis for R = Er, Tm. Of these compounds, strongly uniaxial behavior is observed for DyAlGe and TmAlGe. At T = 2 K, rich metamagnetism is observed when the external field is applied along the $a$-axis for R = Tb--Ho, whereas a single metamagnetic transition is observed (up to 70 kOe) with the field along the $b$-axis when R = Er and Tm. All RAlGe materials show metallic transport behavior and have moderate positive magnetoresistance up to 60-150 % at 2 K superimposed on top of metamagnetic features. The field dependent magnetization measurements on non-moment bearing YAlGe show clear de Haas-van Alphen oscillations, indicating the Fermi surface includes small, high mobility pockets.